MMSF3P02HD
Power MOSFET
3 Amps, 20 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
http://onsemi.com
3 AMPERES, 20 VOLTS
RDS(on) = 75 mW
P−Channel
D
G
Features
•
•
•
•
•
•
•
•
•
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO−8 Package Provided
This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Symbol
Value
Unit
Drain−to−Source Voltage
Rating
VDSS
20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
20
VGS
± 20
MARKING
DIAGRAM
8
SO−8
CASE 751
STYLE 13
8
1
S3P02
AYWWG
G
1
S3P02 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Vdc
Gate−to−Source Voltage − Continuous
S
Vdc
PIN ASSIGNMENT
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID
ID
Adc
N−C
1
8
Drain
IDM
5.6
3.6
30
Apk
Source
2
7
Drain
Total Power Dissipation @ TA = 25°C (Note 2)
PD
2.5
W
Source
3
6
Drain
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Gate
4
5
Drain
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 14
mH, RG = 25 W)
EAS
567
mJ
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
50
°C/
W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 8
1
Device
MMSF3P02HDR2G
Package
Shipping†
SO−8
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMSF3P02HD/D
