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BSR56
BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits Interchangeable drain and source connections Small package 1.3 Applications Low-power, chopper or switching applications Thick and thin-film circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions BSR56 Min VDS drain leakage current Min Max BSR58 Min Unit Max - drain-source voltage IDSS Max BSR57 VDS = 15 V; VGS = 0 V; Tmb = 40 C 40 - 40 - 40 V - >50 - >20 - >8 mA - - - <100 - <80 mA - >2 - >0.8 - V - <6 - <4 - V - <5 - <5 - <5 pF ID = 20 mA; VGSM = 10 V - <25 - - - - ns - - - <50 - - ns ID = 5 mA; VGSM = 4 V Crs >4 <10 ID = 10 mA; VGSM = 6 V VGSoff - - - - - <100 ns Tmb = 40 °C - 250 - 250 - 250 mW VGS = 0 V; ID = 0 A; f = 1 kHz - <25 - <40 - <60 gate-source cut-off voltage VDS = 15 V; ID = 0.5 nA feedback capacitance VDS = 0 V; VGS = 10 V; f = 1 MHz Switching time (VDD = 10 V; VGS = 0 V) toff Ptot turn-off time total power dissipation Static characteristics RDSon drain-source on-state resistance
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