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2SD2406
2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 4 A Base current IB 0.4 A PC 25 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21
TOSHIBA
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