IRFL9014, SiHFL9014
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) ()
VGS = - 10 V
0.50
Qg (Max.) (nC)
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
S
DESCRIPTION
SOT-223
D
G
G
D
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
S
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
SOT-223
SiHFL9014-GE3
IRFL9014PbF
SiHFL9014-E3
IRFL9014
SiHFL9014
SOT-223
SiHFL9014TR-GE3
IRFL9014TRPbFa
SiHFL9014T-E3a
IRFL9014TRa
SiHFL9014Ta
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
LIMIT
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
- 60
± 20
- 1.8
- 1.1
- 14
0.025
0.017
140
- 1.8
0.31
3.1
2.0
- 4.5
- 55 to + 150
300d
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
EAR
Repetitive Avalanche Energya
Maximum Power Dissipation
TC = 25 °C
PD
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
dV/dt
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91195
S11-0893-Rev. D, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
