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SI9430DY-T1
Si9430DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "20 Unit Continuous Drain Current (TJ = 150_C)a TA = 25_C ID TA = 70_C "5.8 "4.6 IDM Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa A –2.4 2.5 PD TA = 70_C Operating Junction and Storage Temperature Range "20 IS Pulsed Drain Current V W 1.6 TJ, Tstg –55 to 150 _C Symbol Limit Unit RthJA 50 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70124 S-00652—Rev. J, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 1
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