• ZENER DIODES
BZV55 C2V4
thru
BZV55 C75
•LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Derating: 3.33 mW / °C above +50°C
Forward Voltage: @ 200mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
TYPE
MAXIMUM
DIFFERENTIAL
RESISTANCE
rdiff @ I Z
ZENER VOLTAGE
(NOTE 1)
VZ @ I ZT
VOLTS
MIN
MAX
mA
OHMS
MAXIMUM
REVERSE
CURRENT
IR @ VR
µA
mA
VOLTS
BZV55
BZV55
BZV55
BZV55
BZV55
C2V4
C2V7
C3V0
C3V3
C3V6
2.2
2.5
2.8
3.1
3.4
2.6
2.9
3.2
3.5
3.8
5
5
5
5
5
100
100
95
95
90
5
5
5
5
5
50
20
10
5
5
1
1
1
1
1
BZV55
BZV55
BZV55
BZV55
BZV55
C3V9
C4V3
C4V7
C5V1
C5V6
3.7
4.0
4.4
4.8
5.2
4.1
4.6
5.0
5.4
6.0
5
5
5
5
5
90
90
80
60
40
5
5
5
5
5
3
3
3
2
1
1
1
2
2
2
BZV55
BZV55
BZV55
BZV55
BZV55
C6V2
C6V8
C7V5
C8V2
C9V1
5.8
6.4
7.0
7.7
8.5
6.6
7.2
7.9
8.7
9.6
5
5
5
5
5
10
15
15
15
15
5
5
5
5
5
3
2
1
.700
.500
4
4
5
5
6
BZV55
BZV55
BZV55
BZV55
BZV55
C10
C11
C12
C13
C15
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.6
5
5
5
5
5
20
20
25
30
30
5
5
5
5
5
.200
.100
.100
.100
.050
7
8
8
8
10.5
BZV55
BZV55
BZV55
BZV55
BZV55
C16
C18
C20
C22
C24
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
5
5
5
5
5
40
45
55
55
70
5
5
5
5
5
.050
.050
.050
.050
.050
11.2
12.6
14.0
15.4
16.8
BZV55
BZV55
BZV55
BZV55
BZV55
C27
C30
C33
C36
C39
25.1
28.0
31.0
34.0
37.0
28.9
32.0
35.0
38.0
41.0
2
2
2
2
2
80
80
80
90
130
2
2
2
2
2
.050
.050
.050
.050
.050
18.9
21.0
23.1
25.2
27.3
BZV55
BZV55
BZV55
BZV55
BZV55
C43
C47
C51
C56
C62
40.0
44.0
48.0
52.0
58.0
46.0
50.0
54.0
60.0
66.0
2
2
2
2
2
150
170
180
200
215
2
2
2
2
2
.050
.050
.050
.050
.050
30.1
32.9
35.7
39.2
43.4
BZV55 C68
BZV55 C75
64.0
70.0
72.0
79.0
2
2
240
255
2
2
.050
.050
47.6
52.2
NOTE 1
Nominal Zener voltage is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C.
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 ÞC/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 35
ÞC/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
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