GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
temperature coefficient
with
positive
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
SOT-227
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
600 V
IC DC
100 A at 117 °C
VCE(on) typical at 100 A, 25 °C
1.72 V
IF DC
100 A at 25 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
TEST CONDITIONS
Continuous collector current
IC (1)
Pulsed collector current
184
TC = 80 °C
137
ILM
Diode continuous forward current
IF
V
TC = 25 °C
ICM
Clamped inductive load current
UNITS
600
VCES
MAX.
350
350
TC = 25 °C
TC = 80 °C
A
100
71
Peak diode forward current
IFSM
200
Gate to emitter voltage
VGE
± 20
Power dissipation, IGBT
PD
Power dissipation, diode
PD
Isolation voltage
VISOL
TC = 25 °C
577
TC = 117 °C
223
TC = 25 °C
205
TC = 117 °C
V
79
Any terminal to case, t = 1 min
2500
W
V
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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