X22C10
256 Bit
64 x 4
Nonvolatile Static RAM
DESCRIPTION
• High Performance CMOS
—120ns RAM Access Time
• High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
• Low Power Consumption
—Active: 40mA Max.
—Standby: 100µA Max.
• Infinite Array Recall, RAM Read and Write Cycles
• Nonvolatile Store Inhibit: VCC = 3.5V Typical
• Fully TTL and CMOS Compatible
• JEDEC Standard 18-Pin 300-mil DIP
• 100% Compatible with X2210
—With Timing Enhancements
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to
be easily transferred from RAM to E2PROM (STORE)
and from E2PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1µs.
ROW
SELECT
A1
CONTROL
LOGIC
bs
STORE
RECALL
INPUT
DATA
CONTROL
du
c
PIN CONFIGURATION
PLASTIC DIP
CERDIP
ARRAY
RECALL
VCC
COLUMN
I/O CIRCUITS
VSS
1
18
VCC
A4
2
17
NC
A3
3
16
A5
A2
STORE
NC
4
15
I/O 4
A1
STATIC RAM
MEMORY ARRAY
ol
A2
et
A0
I/O3
ro
e
NONVOLATILE E2PROM
MEMORY ARRAY
I/O2
Xicor NOVRAMs are designed for unlimited write operations to the RAM, either RECALLs from E2PROM or
writes from the host. The X22C10 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
P
FUNCTIONAL DIAGRAM
I/O1
t
FEATURES
5
X22C10 14
I/O 3
A0
6
13
I/O 2
CS
VSS
7
12
I/01
8
11
WE
STORE
9
10
RECALL
COLUMN SELECT
SOIC
A4
1
2
15
3
14
I/O 4
4
13
I/O 3
5
X22C10 12
I/O 2
CS
VSS
6
11
I/01
7
10
WE
8
9
RECALL
A3
A2
CS
WE
REV 1.0 1/30/01
VCC
A0
A5
A5
A1
A4
O
A3
16
STORE
I/O4
www.xicor.com
Characteristics subject to change without notice.
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