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E28F016XD85

製品説明
仕様・特性

E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses n n Multiplexed Address Bus  RAS# and CAS# Control Inputs n n No-Glue Interface to Many Memory Controllers SmartVoltage Technology  User-Selectable 3.3V or 5V V CC  User-Selectable 5V or 12V V PP 0.33 MB/sec Write Transfer Rate x16 Architecture n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 µm ETOX™ IV Flash Technology Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems. The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface. Its high read performance combined with flexible block locking enable both storage and execution of operating systems/application software and fast access to large data tables. The 28F016XD is manufactured on Intel’s 0.6 µm ETOX IV process technology. December 1996 Order Number: 290533-004

ブランド

INTEL

会社名

Intel Corporation

本社国名

U.S.A

事業概要

マイクロプロセッサ・チップセット・フラッシュメモリなどの開発・製造・販売 世界CPU市場ではここ数年80%近いシェアを維持している。

供給状況

 
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