ADVANCED TECHNICAL INFORMATION
HiPerFETTM MOSFET
IXFC13N50
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
= 500
= 12
= 0.4
≤ 250
V
A
Ω
ns
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
12
A
IDM
TC = 25°C, pulse width limited by TJM
48
A
IAR
TC = 25°C
13
A
EAR
TC = 25°C
18
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
140
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
3
g
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Weight
G
D
S
G = Gate
S = Source
Isolated back surface*
D = Drain
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
FastintrinsicRectifier
Applications
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 2.5 mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Notes 1, 2
© 2003 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
±100
TJ = 25°C
TJ = 125°C
4
nA
200
1
µA
mA
0.4
Ω
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
See IXFH13N50 data sheet for
characteristic curves
DS98756(7/03)