IXDP 35N60 B
VCES
= 600 V
= 60 A
IXDH 35N60 B
IC25
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
C
C
G
TO-247 AD
IXDH ...
G
E
G
C
E
C (TAB)
E
IXDH 35N60 B
IXDP 35N60 B
IXDH 35N60 BD1
Symbol
Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 20 kW
600
V
VGES
Continuous
±20
Transient
±30
V
IC25
TC = 25°C
60
A
IC90
TC = 90°C
35
A
ICM
TC = 90°C, tp =1 ms
70
A
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 µH
ICM = 110
VCEK < VCES
A
tSC
(SCSOA)
VGE = ±15 V, VCE = 600 V, TJ = 125°C
RG = 10 W, non repetitive
10
µs
PC
TC = 25°C
IXDP ...
G
C
E
V
VGEM
TO-220 AB
G = Gate,
C = Collector ,
q
q
250
80
W
W
TJ
-55 ... +150
-40 ... +150
°C
300
°C
0.4 - 0.6
0.8 - 1.2
Nm
Nm
q
°C
Tstg
q
q
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
TO-220
TO-247
Weight
6
g
q
Conditions
V(BR)CES
VGE = 0 V
VGE(th)
IC
ICES
VCE = VCES
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
V
q
IGES
IC
TJ = 25°C
TJ = 125°C
5
1
VCE = 0 V, VGE = ± 20 V
VCE(sat)
3
q
q
0.1 mA
mA
q
q
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
± 500 nA
2.2
2.7
V
232
= 35 A, VGE = 15 V
V
Space savings
High power density
Typical Applications
q
= 0.7 mA, VCE = VGE
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Advantages
q
Symbol
E = Emitter
TAB = Collector
Features
q
IGBT
Diode
C (TAB)
© 2002 IXYS All rights reserved
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