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IXGH25N100A
IXGH25N100A Transistors N-Channel IGBT V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8 g(fe) Max. (S) Trans. admitt.15 @I(C) (A) (Test Condition)25 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25 @V(GE) (Test Condition)15 td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200n t(d)off Max. (s) Off time500n t(f) Max. (s) Fall time.500n V(GE)th Max. (V)5.0 I(GES) Max. (A)100n
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