DSEP 30-03A
HiPerFREDTM Epitaxial Diode
IFAV = 30 A
VRRM = 300 V
trr
= 30 ns
with soft recovery
VRSM
VRRM
V
300
TO-247 AD
V
300
Type
C
A
C
DSEP 30-03A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 135°C; rectangular, d = 0.5
IFSM
70
30
A
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
300
A
EAS
TVJ = 25°C; non-repetitive
IAS = 3 A; L = 180 µH
1.2
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.3
A
-55...+175
175
-55...+150
°C
°C
°C
165
W
0.8...1.2
Nm
6
g
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
IR
①
VF ②
Characteristic Values
typ.
max.
VR = VRRM;
VR = VRRM;
TVJ = 25°C
TVJ = 150°C
250
1
µA
mA
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
1.14
1.55
V
V
0.9
K/W
K/W
RthJC
RthCH
0.25
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
25
IRM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
2.5
ns
3.5
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see pages Outlines.pdf
A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
439
Data according to IEC 60747 and per diode unless otherwise specified.
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