MX29LV128M T/B
128M-BIT SINGLE VOLTAGE 3V ONLY
BOOT SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Configuration
- 16,777,216 x 8 / 8,388,608 x 16 switchable
• Sector structure
- 8KB(4KW) x 8 and 64KB(32KW) x 255
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word OTP area for permanent, secure identification
- Can be programmed and locked at factory or by customer
• Latch-up protected to 250mA from -1V to VCC + 1V
• Low VCC write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power supply Flash
• Low Power Consumption
- Active read current: 18mA(typ.)
- Active write current: 20mA(typ.)
- Standby current: 20uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-years data retention
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Program Suspend/Program Resume
- Suspend program operation to read other sectors
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data/program other sectors
• Status Reply
- Data# polling & Toggle bits provide detection of program and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protection settings
- ACC (high voltage) accelerates programming time
for higher throughput during system
PERFORMANCE
• High Performance
- Fast access time: 90R/100ns
- Page read time: 25ns
- Sector erase time: 0.5s (typ.)
- 4 word/8 byte page read buffer
- 16 word/ 32 byte write buffer: reduces programming
time for multiple-word/byte updates
PACKAGE
• 56-pin TSOP
• All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
The MX29LV128M T/B is a 128-mega bit Flash memory
organized as 16M bytes of 8 bits or 8M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV128M T/B is packaged in 56-pin TSOP. It is
designed to be reprogrammed and erased in system or in
standard EPROM programmers.
The standard MX29LV128M T/B offers access time as
fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV128M T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
P/N:PM1142
REV. 1.0, AUG. 11, 2005
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