TK100A10N1
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK100A10N1
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V)
(2)
Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(3)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
25
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit)
(Note 1,2)
ID
207
Drain current (DC)
(Tc = 25)
(Note 1)
ID
100
(t = 1 ms)
(Note 1)
IDP
362
PD
45
W
EAS
222
mJ
IAR
100
A
Drain current (pulsed)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 3)
Avalanche current
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2012-01
2014-01-28
Rev.3.0
