SF10GZ47, SF10JZ47
TOSHIBA THYRISTOR
SILICON PLANAR TYPE
SF10GZ47, SF10JZ47
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak Off−State Voltage: VDRM = 400V,600V
Repetitive Peak Reverse Voltage: VRRM = 400V,600V
Average On−State Current: IT (AV) = 10A
Isolation Voltage: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
and Repetitive Peak
Reverse Voltage
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<5ms,
Tj = 0~125°C)
SF10GZ47
SF10JZ47
SYMBOL
VDRM
VRRM
SF10GZ47
RATING
400
V
600
500
VRSM
SF10JZ47
Average On−State Current
(Half Sine Waveform Tc = 66°C)
R.M.S. On−State Current
Peak One Cycle Surge On-State
Current (Non−Repetitive)
2
I t Limit Value
UNIT
V
720
IT (AV)
10
A
JEDEC
―
IT (RMS)
16
A
JEITA
―
A
TOSHIBA
2
Weight: 1.7 g (typ.)
ITSM
2
160 (50Hz)
176 (60Hz)
I t
125
A s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
100
A / μs
Peak Gate Power Dissipation
PGM
5
W
PG (AV)
0.5
W
Peak Forward Gate Voltage
VFGM
10
V
Peak Reverse Gate Voltage
VRGM
−5
V
Peak Forward Gate Current
IGM
2
A
Tj
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Isolation Voltage (AC, t = 1min.)
VIsol
1500
13-10H1B
V
Average Gate Power Dissipation
Junction Temperature
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM ≤ 30A
tgw ≥ 10μs
tgr ≤ 250ns
igp = IGT × 2.0
1
2004-07-06
