K6X4016T3F Family
CMOS SRAM
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
History
Draft Date
Remark
0.0
Initial draft
July 29, 2002
Preliminary
0.1
Revised
- Added Commercial product
- Deleted 44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
December 2, 2002
Preliminary
1.0
Finalized
- Changed ICC(Operating power supply current) from 4mA to 2mA
- Changed ICC1(Average operating current) from 4mA to 3mA
- Changed ICC2(Average operating current) from 40mA to 25mA
- Changed ISB1(Standby Current(CMOS), Commercial)
from 15µA to 10µA
- Changed ISB1(Standby Current(CMOS), Industrial)
from 20µA to 10µA
- Changed ISB1(Standby Current(CMOS), Automotive)
from 30µA to 20µA
- Changed IDR(Data retention current, Commercial)
from 15µA to 10µA
- Changed IDR(Data retention current, Industrial)
from 20µA to 10µA
- Changed IDR(Data retention current, Automotive)
from 30µA to 20µA
August 8, 2003
Final
2.0
Revised
- Changed ISB1 of Automotive product from 20µA to 30µA
- Changed IDR of Automotive product from 20µA to 30µA
- Added Lead Free Products
March 27, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 2005
