STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK
PowerMesh™ MOSFET
TYPE
VDSS
s
s
s
s
ID
500V
500V
STD2NB50
STD2NB50-1
RDS(on)
< 6Ω
< 6Ω
1A
1A
TYPICAL RDS(on) = 5 Ω
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
3
3
2
1
1
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25°C
1
A
ID
Drain Current (continuos) at TC = 100°C
0.63
A
4
A
VGS
IDM (q)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
dv/dt(1)
Tstg
Tj
40
W
Derating Factor
0.32
W/°C
Peak Diode Recovery voltage slope
3.5
V/ns
–65 to 150
°C
150
°C
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2001
(1)ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
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