YG868C12R (30A)
(120V / 30A )
[0401]
High Voltage Schottky barrier diode
Outline drawings, mm
10±0.5
ø3.2
4.5±0.2
+0.2
-0.1
Major characteristics
IO
V
V
30
1
Tc=25°C MAX.
A
2
3
1.2±0.2
13Min
120
0.88
3.7±0.2
VRRM
VF
2.7±0.2
Characteristics YG868C12R Units Condition
15±0.3
6.3
2.7±0.2
+0.2
-0
0.7±0.2
2.54±0.2
Features
Low VF
High Voltage
Center tap connection
0.6
2.7±0.2
Applications
Package : TO-220F
Epoxy resin UL : V-0
High frequency operation
DC-DC converters
AC adapter
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
1
2
Rating
Repetitive peak surge reverse voltage
VRSM
Repetitive peak reverse voltage
VRRM
Isolating voltage
Viso
Terminals-to-Case,
AC.1min
Average output current
Io
Square wave, duty=1/2
Tc=115°C
Non-repetitive surge current **
IFSM
Sine wave
10ms 1shot
Operating junction temperature
Storage temperature
tw=500ns, duty=1/40
3
Unit
120
V
120
V
1500
V
30 *
A
225
A
Tj
+150
°C
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VF
IFM=15A
0.88
V
Reverse current
IR
VR=VRRM
200
µA
1.2
°C/W
Thermal resistance
Rth(j-c)
Junction to case
Mechanical characteristics
Mounting torque
Approximate mass
Recommended torque
0.3 to 0.5
2
N·m
g
