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ME1120
ME1120 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)120 V(BR)CBO (V)130 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)6.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) C(obo) (Max) (F)4.0p @V(CB) (V) (Test Condition) @Freq. (Hz) (Test Condition)
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