,U
nc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
BDY58
DESCRIPTION
• Collector-Emitter Sustaining Voltage:VCEo(sus)=125V(Min)
• High Power Dissipation
• Low Collector Saturation Voltage
APPLICATIONS
3
I
• LF signal power amplification.
• High current fast switching
1
PIN
1.BASE
£
2. EMITTER
^S
3. COLLECT OR (CASE)
2
TO-3 package
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE
n^N^n *
UNIT
VCBO
Collector- Base Voltage
160
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
10
25
A
J
1
C
V
Collector Current-Continuous
t
IE
I
\J /
Ic
I
-*4U-D2PL
^K
i f
Base Current-Continuous
Tj
Tstg
Junction Temperature
Storage Temperature Range
W
SYMBOL
\a
Mini
DM
MN
MAX
°C
-65-200
°c
MAX
UNIT
A
B
39£O
25.30 26.67
C
D
E
4_
H
K
7.90 8.30
090
110
1.40 1.60
1092
S4S
It 40 1350
L
200
THERMAL CHARACTERISTICS
PARAMETER
B
t
\**,J ^S^
A
175
PC
6
G
t
IB
JH&7$---$
1675 ir0S
H
0
1940 1962
400
420
U
Rth j-c
Thermal Resistance, Junction to Case
1.0
°C/W
virv)
3020
V
430
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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