ZTX752
ZTX753
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
ZTX752
ZTX753
PARAMETER
SYMBOL
Transition
Frequency
fT
Switching Times
ton
40
40
ns
toff
600
600
ns
Output
Capacitance
MIN. TYP.
100
MAX. MIN. TYP.
140
100
140
UNIT CONDITIONS.
MHz
30
Cobo
MAX.
30
IC=-100mA, VCE=-5V
f=100MHz
ZTX752
ZTX753
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
C
B
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
pF
VCB=10V f=1MHz
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX752
ZTX753
UNIT
V
Collector-Base Voltage
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
VEBO
-5
V
ICM
-6
A
IC
-2
A
Ptot
1
5.7
W
mW/°C
-55 to +200
°C
Power Dissipation
at Tamb=25°C
derate above 25°C
Tj:Tstg
Operating and Storage Temperature Range
V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
V(BR)CBO
-100
-120
V
IC=-100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO
-80
-100
V
IC=-10mA*
V(BR)EBO
-5
-5
V
IE=-100µA
D=0.5
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
ICBO
D=0.2
-10
µA
µA
µA
µA
VCB=-80V
VCB=-100V
VCB=-80V,Tamb=100°C
VCB=-100V,Tamb=100°C
-0.1
-0.1
µA
VEB=-4V
Collector-Emitter
VCE(sat)
Saturation Voltage
-0.17 -0.3
-0.30 -0.5
-0.17 -0.3
-0.30 -0.5
V
V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
Base-Emitter
VBE(sat)
Saturation Voltage
-0.9
-1.25
-0.9
-1.25 V
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
-0.8
-1
-0.8
-1
IC=-1A, VCE=-2V*
200
Thermal Resistance (°C/W)
Max Power Dissi ation - (Watts)
2.5
-100
Continuous Collector Current
SYMBOL
-120
-80
Peak Pulse Current
PARAMETER
-100
VCEO
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCBO
Collector-Emitter Voltage
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
D=1 (D.C.)
t1
D=t1/tP
tP
100
-0.1
-0.1
-10
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-261
Emitter Cut-Off
Current
IEBO
VBE(on)
3-260
V
