2SA1216
LAPT
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)
sElectrical Characteristics
sAbsolute maximum ratings (Ta=25°C)
Symbol
Unit
–180
V
External Dimensions MT-200
(Ta=25°C)
SymboI
Conditions
Ratings
Unit
VCBO
Ratings
VCBO
Application : Audio and General Purpose
VCB=–180V
–100max
µA
VEB=–5V
–100max
–180min
24.4±0.2
µA
IC=–25mA
2.1
V
VCEO
–180
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–17
A
hFE
VCE=–4V, IC=–8A
30min∗
IB
–5
A
VCE(sat)
IC=–8A, IB=–0.8A
–2.0max
V
PC
200(Tc=25°C)
W
fT
VCE=–12V, IE=2A
40typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
2-ø3.2±0.1
7
21.4±0.3
a
b
2
3
5.45±0.1
RL
(Ω)
IC
(A)
VB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
4
–10
5
–1
1
0.3typ
0.7typ
C
E
Weight : Approx 18.4g
a. Part No.
b. Lot No.
tf
(µs)
–40
0.2typ
I C – V CE Characteristics (Typical)
I B =–20mA
0
0
–1
–2
–3
–4
0
–0.8
0
–1.0
0
50
–5
125˚C
100
25˚C
–30˚C
50
10
–0.02
–10 –17
–0.1
f T – I E Characteristics (Typical)
)
–2
–2.4
θ j-a – t Characteristics
–0.5 –1
–5
–10 –17
2
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
e T
emp
–1
Base-Emittor Voltage V B E (V)
200
DC Cur rent Gain h F E
Typ
–1
–0.6
(V C E =–4V)
300
–0.5
–0.4
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
–0.1
–0.2
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
–0.02
e T
em
p)
Tem
p)
–5A
0
Collector-Emitter Voltage V C E (V)
100
–5
I C =–10A
Cas
–1
˚C(
–50mA
–30
–5
–10
Cas
–100mA
–2
ase
–150mA
˚C(
–2 00 mA
–10
–15
C(C
A
(V C E =–4V)
–17
25˚
–3 00 m
–3
125
mA
Collector Current I C (A)
0
–40
θ j - a (˚ C/W)
A
I C – V BE Temperature Characteristics (Typical)
Transient Thermal Resistance
–7
m
00
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–15
–5
–1.
5A
–1
A
00
m
A
–17
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
sTypical Switching Characteristics (Common Emitter)
Collector Current I C (A)
9
4.0max
20.0min
Tstg
100
1000
2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
200
10
m
Emitter Current I E (A)
10
–0.2
–2
–10
–100
Collector-Emitter Voltage V C E (V)
–300
nk
1
si
0.1
at
0
0.02
Without Heatsink
Natural Cooling
he
–0.5
120
ite
–1
fin
–5
160
In
20
DC
–10
ith
Collect or Cur ren t I C (A)
s
T
40
yp
W
M aximum Power Dissipa ti on P C (W)
–50
60
Cu t-off Fre quen cy f T (MH Z )
DC Curr ent Gain h F E
6.0±0.2
36.4±0.3
80
40
5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
13
