NTGD1100L, STGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
www.onsemi.com
V(BR)DSS
RDS(on) TYP
8.0 V
±3.3 A
55 mW @ −2.5 V
80 mW @ −1.8 V
SIMPLIFIED SCHEMATIC
4
2,3
Q2
Features
•
•
•
•
•
•
•
ID MAX
40 mW @ −4.5 V
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 2000 V
These Devices are Pb−Free and are RoHS Compliant
6
Q1
5
1
MARKING DIAGRAM &
PIN ASSIGNMENT
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
ON/OFF Voltage (VGS, N−Ch)
Continuous Load Current Steady
(Note 1)
State
TA = 25°C
Power Dissipation
(Note 1)
TA = 25°C
Steady
State
Pulsed Load Current
8.0
V
8.0
V
IL
±3.3
A
±2.4
TA = 85°C
PD
TA = 85°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 kW)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D1/G2
6
Unit
VON/OFF
Input Voltage (VDSS, P−Ch)
Value
VIN
Rating
1
TSOP−6
CASE 318G
STYLE 11
0.43
ILM
±10
A
1
S1
TJ,
TSTG
−55 to
150
°C
IS
−1.0
A
ESD
2.0
260
°C
2 3
D2 D2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
kV
TL
TZ
M
G
S2
4
TZ M G
G
W
0.83
G1
5
ORDERING INFORMATION
Device
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Package
Shipping†
NTGD1100LT1G
TSOP−6 3000 / Tape & Reel
(Pb−Free)
STGD1100LT1G
TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 11
1
Publication Order Number:
NTGD1100L/D