ISDN S-Interface Low Profile
Dual SMT Transformers
RoHS peak reflow temperature rating 245�C
Meets pulse waveform template of CCITT I.430 when
recommended transformer and chip pair are used
Excellent longitudinal balance
2 kVrms isolation voltage
Available in Tape & Reel or tube packaging
UL recognized
Electrical Specifications @ 25°C - Operating Temperature 0°C to 70°C
L L Sec
CD Pri B
OCL Pri
CW/W
(μH MAX)
(pF MAX)
(mH MIN)
(pF MAX)
A
Ratio
(±2%)
DCR Sec
(W ±25%)
DCR Pri
(Ω ±25%)
RoHS
Complian
Part Number
D I DC C
(mA MAX)
A
B
A&B
A
B
A&B
A
B
A
B
A
B
T5008NL
1:1
1:1
22
5
5
100
42
42
2.4
2.4
2.4
2.4
1750
U.S. Patent No. 5,015,981Z
Notes:
A. A center-tapped winding can be created by connecting two ends of a split center winding together on the printed circuit board. In ISDN-S applications, the primary winding is the line
side transforme winding.
B. Minimum primary inductance and maximum distributed capacitance satisfy the transmitter output and receiver input impedance requiremens of CCITT I.430 for both the TE and the NT.
The maximum distributed capacitance allows sufficient margin for the capacitance of the IC and a protection diode network. It is consistent with the overall maximum value specified
and the permitted length of the basic access TE cord.
C. The maximum specified unbalanced DC current capability is based on 20 mH minimum primary OCL.
Mechanical
Schematic
T5008NL
16 15 14 13
12 11 10
SEC
PRI
1
2 3
CO
Inches
Dimensions:
mm
4
5
6 7
CO
Unless otherwise specified, all tolerances are ± .010
0,25
USA 858 674 8100
Germany 49 7032 7806 0
1
Singapore 65 6287 8998
pulseelectronics.com
Shanghai 86 21 62787060
China 86 755 33966678
Taiwan 886 3 4356768
T613.E (04/12)
