2SD2204
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SD2204
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
•
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)
•
Unit: mm
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
65 ± 10
V
Collector-emitter voltage
VCEO
65 ± 10
V
Emitter-base voltage
VEBO
7
V
DC
IC
4
Pulse
ICP
6
IB
0.5
Collector current
Base current
Ta = 25°C
Collector power
dissipation
PC
Tc = 25°C
Junction temperature
2.0
25
A
A
W
―
JEITA
Tj
Storage temperature range
JEDEC
150
°C
Tstg
−55 to 150
°C
TOSHIBA
SC-67
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2006-11-21
