DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
PART NUMBER
PACKAGE
2SK3634
TO-251 (MP-3)
2SK3634-Z
TO-252 (MP-3Z)
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
• Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±6.0
A
ID(pulse)
±18
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Drain Current (Pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
6.0
A
Single Avalanche Energy
Note2
EAS
3.6
mJ
IAR
6.0
A
EAR
2.0
(TO-252)
mJ
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch ≤ 125°C , RG = 25 Ω, VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15936EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
