2SK2782
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)
2SK2782
Unit: mm
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
1.7 ± 0.2
6.8 MAX.
5.2 ± 0.2
0.6 MAX
: RDS (ON) = 0.039 Ω (typ.)
High forward transfer admittance
: |Yfs| = 11 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
0.95 MAX.
12.0 MIN.
Low drain−source ON-resistance
5.5 ± 0.2
4-V gate drive
0.6 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
2.3
Rating
Unit
Drain−source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
60
V
VGSS
±20
V
(Note 1)
ID
20
A
Pulse (Note 1)
Gate−source voltage
DC
Drain current
Single-pulse avalanche energy
(Note 2)
EAS
156
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
3
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
5.5 ± 0.2
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
0.6 MAX.
Precautions”/“Derating Concept and Methods”) and individual reliability data
2.3 2.3
1
Thermal Characteristics
2
2.3
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.125
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
125
3
2.3
0.1 ± 0.1
(i.e. reliability test report and estimated failure rate, etc).
Symbol
2.5 MAX.
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Characteristic
0.6 MAX.
1.5 ± 0.2
W
2
1
1.7 ± 0.2
A
40
3
GATE
DRAIN
（HEAT SINK）
3. SOURSE
9.6 ± 0.3
50
PD
2
1.
2.
1.1 ± 0.2
IDP
Drain power dissipation (Tc = 25°C)
1
2.5 MAX.
Symbol
1.1 ± 0.2
Characteristic
0.6 MAX.
2.3
2
°C / W
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURSE
1
3
Note 1: Ensure that the channel temperature does not exceed 150°C.
JEDEC
―
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 530 μH, RG = 25 Ω, ID = 20 A
JEITA
―
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-12-21
2SK2782
3
2009-12-21
