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MAZC062D0LTAPINGREEL
This product complies with the RoHS Directive (EU 2002/95/EC). ESD Diodes MAZC062D Silicon planar type Unit: mm For surge absorption circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 ■ Absolute Maximum Ratings Ta = 25°C 200 Tstg °C −55 to +150 Tj Storage temperature mW 150 Junction temperature mA 200 PD Unit °C 0.4±0.2 10˚ 1.1+0.3 –0.1 IFRM Power dissipation* Rating 1.1+0.2 –0.1 Repetitive peak forward current 2.90+0.20 –0.05 0 to 0.1 Symbol 5˚ d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at ion / . 1.9±0.1 (0.65) 2 1 (0.95) (0.95) Parameter 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d • Low joint capacity zener diode • Two elements anode-common type 1.50+0.25 –0.05 3 ■ Features 1: Cathode 1 2: Cathode 2 3: Anode Mini3-G1 Package EIAJ: SC-59 Note) *: Ptot = 200 mW achieved with a printed circuit board. Marking Symbol: 6.2C Internal Connection 3 2 ue 1 Parameter Forward voltage Symbol VF voltage* VZ an Zener ce /D isc on tin ■ Electrical Characteristics Ta = 25°C ± 3°C en Zener rise operating resistance RZK RZ Reverse current IR Terminal capacitance Ct Ma int Zener operating resistance Conditions Min IF = 10 mA IZ = 5 mA Typ Max Unit 0.9 1.0 V 5.9 6.5 IZ = 5 mA 30 VR = 5.5 V VR = 0 V, f = 1 MHz V 100 IZ = 0.5 mA Ω Ω 3 8 µA pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 5 MHz 3. Electrostatic breakdown voltage: ±15 kV Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) Test unit: ESS-200AX 4. *: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation. Guaranteed at 20 ms after power application. Publication date: March 2004 SKE00009CED 1
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