LX5510
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 125 mA total DC
current with the nominal 3.3V bias.
With increased bias of 5 V EVM is ~
4% at 23 dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead quad package
(MLPQ). The compact footprint, low
profile, and excellent thermal capability
of the MLPQ package makes the
LX5510 an ideal solution for mediumgain power amplifier requirements for
IEEE 802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 125mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
WWW . Microsemi .C OM
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). With single low voltage
supply of 3.3V 20 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free Transition DC: 0418
LX5510
LX5510
LX5510LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5510LQ-TR)
This device is classified as ESD Level 0 in accordance
with JESD22-A114-B, (HBM) testing. Appropriate
ESD procedures should be observed when handling
this device.
Copyright © 2000
Rev. 1.0d 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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