2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching Regulator Applications
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Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
10
Pulse (t = 1 ms)
(Note 1)
IDP
40
Drain power dissipation (Tc = 25°C)
PD
45
W
TOSHIBA
Single pulse avalanche energy
(Note 2)
EAS
363
mJ
Weight: 1.9 g (typ.)
DC
Drain current
A
JEDEC
—
JEITA
Avalanche current
IAR
10
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
2-10R1B
A
Repetitive avalanche energy (Note 3)
SC-67
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2008-08-22
