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D431000ACZ-70LL
DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In addition to this, A and B versions are low voltage operations. The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4 mm) and (8 × 20 mm). Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enable input for easy application • Two Chip Enable inputs: /CE1, CE2 Part number Access time Operating supply Operating ambient ns (MAX.) Supply current At operating At standby At data retention °C mA (MAX.) µA (MAX.) µA (MAX.) Note1 4.5 to 5.5 0 to 70 70 100 15 20 70, 85 temperature V µPD431000A-xxL voltage 3 µPD431000A-xxLL µPD431000A-Axx µPD431000A-Bxx , 100 3.0 to 5.5 35 Note3 13 Note5 , 100, 120, 150 2.7 to 5.5 30 Note4 11 Note6 70 70 Note2 Note2 Notes 1. TA ≤ 40 °C 2. VCC = 4.5 to 5.5 V 3. 70 mA (VCC > 3.6 V) 4. 70 mA (VCC > 3.3 V) 5. 20 µA (VCC > 3.6 V) 6. 20 µA (VCC > 3.3 V) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M11657EJBV0DS00 (11th edition) Date Published April 2002 NS CP (K) Printed in Japan The mark 5 shows major revised points. © 1990, 1993, 1995
NEC
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RENESAS
ルネサス エレクトロニクス株式会社
日本
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