Ordering number : ENA0408A
SB02-09C
Schottky Barrier Diode
http://onsemi.com
90V, 0.2A, Low IR, Single CP
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
• Fast reverse recovery time (trr max=10ns)
Low forward voltage (VF max=0.7V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Conditions
Ratings
Unit
VRRM
VRSM
Surge Forward Current
IO
IFSM
Junction Temperature
Storage Temperature
90
V
200
50Hz sine wave, 1 cycle
V
95
mA
5
A
Tj
--55 to +125
°C
Tstg
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7013A-004
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
0.1
SB02-09C-TB-E
Packing Type: TB
Marking
1.5
3
D
TB
1 : Anode
2 : No Contact
3 : Cathode
CP
0.3
1.1
0.4
0.05
0.95
2
LOT No.
1
LOT No.
0.5
2.5
0.5
2.9
Electrical Connection
3
1
Semiconductor Components Industries, LLC, 2013
September, 2013
2
71112 TKIM/42506SB MSIM TA-100742 No.A0408-1/7
