TLP291
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
Unit: mm
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage
: 80 V (min)
Current Transfer Ratio
Rank GB
: 50% (min)
: 100% (min)
Isolation Voltage
: 3750 Vrms (min)
Operation temperature
: -55 to 110 ˚C
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
UL recognized
: UL1577, File No. E67349
cUL approved
: CSA Component Acceptance Service No.5A,
File No. 67349
SEMKO approved:
EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
BSI approved
Pin Configuration
: BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
TLP291
1
4
2
3
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Construction Mechanical Rating
Creepage distance:
5.0 mm (min)
Clearance:
5.0 mm (min)
Insulation thickness:
0.4 mm (min)
Start of commercial production
2012/02
1
2014-09-22
