RBV600 - RBV610
SILICON BRIDGE RECTIFIERS
RBV25
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
∅ 3.2 ± 0.1
FEATURES :
~ ~
+
1.0 ± 0.1
17.5 ± 0.5
11 ± 0.2
20 ± 0.3
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 VDC
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
13.5 ± 0.3
*
*
*
*
*
*
*
*
*
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.80 grams ( Approximaly )
10
±0.2
2.0 ± 0.2
7.5 7.5
±0.2 ±0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RBV
600
RBV
601
RBV
602
RBV
604
RBV
605
RBV
606
RBV
608
RBV 610
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
500
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
350
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
500
600
800
1000
V
Maximum Average Forward Current Tc = 55°C
IF(AV)
6.0
A
IFSM
200
A
I2 t
VF
64
1.0
A2S
V
RATING
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 3.0 A
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
RθJC
8.0
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
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Rev. 04 : September 9, 2005