FDN358P
Single P-Channel, Logic Level, PowerTrench MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
• –1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
• High performance trench technology for extremely
low RDS(ON) .
• Low gate charge (4 nC typical)
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
G
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
S
G
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Drain Current
(Note 1a)
– Pulsed
V
±20
– Continuous
Units
–30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
V
–1.5
A
–5
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
0.5
(Note 1b)
PD
0.46
W
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
358
FDN358P
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
FDN358P Rev G (W)
FDN358P
January 2003
FDN358P
Typical Characteristics
5
VGS=-10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
2.2
-4.5V
-6.0V
4
-3.5V
3
2
-3.0V
1
2.0
VGS=-4.0V
1.8
1.6
-4.5V
-5.0V
1.4
-6.0V
1.2
-7.0V
-10V
1.0
0
0
0.5
1
1.5
2
0.8
2.5
0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
1.6
ID = -1.5A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
ID = -0.75A
0.3
TA = 125oC
0.2
TA = 25oC
0.1
0
150
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5
-ID, DRAIN CURRENT (A)
-IS, REVERSE DRAIN CURRENT (A)
10
TA = -55oC
VDS = -5V
25oC
4
125oC
3
2
1
0
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN358P Rev G (W)
