FDH3632 / FDP3632 / FDB3632
N-Channel PowerTrench® MOSFET
100 V, 80 A, 9 mΩ
Features
Applications
• RDS(ON) = 7.5 mΩ (Typ.), VGS = 10 V, ID = 80 A
• Synchronous Rectification
• Qg(tot) = 84 nC (Typ.), VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• Micro Solar Inverter
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
D
D
G
D
TO-247
S
G
GD
S
TO-220
G
S
D2-PAK
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
FDH3632 / FDP3632 /
FDB3632
Parameter
Symbol
Unit
VDSS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
80
A
Drain Current
ID
Continuous (TC < 111oC, VGS = 10V)
o
o
Continuous (Tamb = 25 C, VGS = 10V, RθJA = 43 C/W)
12
A
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
337
mJ
Power dissipation
310
W
Derate above 25oC
2.07
W/oC
-55 to 175
oC
Pulsed
EAS
PD
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case, Max. TO-220, D2-PAK, TO-247
RθJA
Thermal Resistance Junction to Ambient, Max. TO-220 (Note 2)
62
oC/W
RθJA
Thermal Resistance Junction to Ambient D2-PAK, Max. 1in2 copper pad area
43
o
RθJA
Thermal Resistance Junction to Ambient, Max. TO-247 (Note 2)
30
oC/W
©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
1
0.48
o
C/W
C/W
www.fairchildsemi.com
FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench® MOSFET
October 2013
125
CURRENT LIMITED
BY PACKAGE
1.0
100
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0
0
25
50
75
100
150
125
75
VGS = 10V
50
25
0
175
25
TC , CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
50
75
100
125
TC, CASE TEMPERATURE (oC)
150
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCE DING ORDER
E
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
IDM, PEAK CURRENT (A)
CURRENT AS FOLLOWS:
VGS = 10V
I = I25
175 - TC
150
100
50
10-5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C5
3
www.fairchildsemi.com
FDH3632 / FDP3632 / FDB3632 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
