FDP3652 / FDB3652
N-Channel PowerTrench® MOSFET
100 V, 61 A, 16 mΩ
Features
Applications
• rDS(on) = 14 mΩ ( Typ.), VGS = 10 V, ID = 61 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• Qg(tot) = 41 nC ( Typ.), VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor drives and Uninterruptible Power Supplies
• Low QRR Body Diode
• Micro Solar Inverter
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82769
D
D
GD
S
G
TO-220
D2-PAK
S
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Drain to Source Voltage
FDP3652 / FDB3652
100
Unit
V
Gate to Source Voltage
±20
V
Parameter
Drain Current
Continuous (TC = 25oC, VGS = 10V)
ID
61
A
Continuous (TC = 100oC, VGS = 10V)
43
A
9
A
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 43oC/W)
Pulsed
E AS
PD
TJ, TSTG
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
182
mJ
Power dissipation
150
Derate above 25oC
Operating and Storage Temperature
1.0
W
W/oC
o
-55 to 175
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-220, D2-PAK
1.0
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-220, D2-PAK (Note 2)
62
o
C/W
43
o
C/W
RθJA
Thermal Resistance Junction to Ambient
©2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
D2-PAK,
1
2
1in copper pad area
www.fairchildsemi.com
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET
October 2013
1.2
75
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
50
25
0.2
0
0
0
25
50
75
100
150
125
175
25
50
75
TC , CASE TEMPERATURE (o C)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
50
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
3
www.fairchildsemi.com
FDP3652 / FDB3652 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
