FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 48 A, 30 V
RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
48
A
– Continuous
– Pulsed
PD
(Note 1)
180
52
W
0.3
W/°C
–65 to +175
°C
°C/W
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.9
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6035AL
FDB6035AL
13’’
24mm
800 units
FDP6035AL
FDP6035AL
Tube
n/a
45
©2003 Fairchild Semiconductor Corporation
FDP6035AL/FDB6035AL Rev D(W)
FDP6035AL/FDB6035AL
July 2003
FDP6035AL/FDB6035AL
Typical Characteristics
1.8
180
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
ID, DRAIN CURRENT (A)
150
5.0V
120
4.5V
90
4.0V
60
3.5V
30
VGS = 3.5V
3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
3.0V
0
0.8
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
5
0
Figure 1. On-Region Characteristics.
80
100
0.030
ID = 24A
VGS =10V
RDS(ON), ON-RESISTANCE (OHM)
ID = 24A
1.6
1.4
1.2
1
0.8
0.6
0.025
0.020
TA = 125oC
0.015
o
TA = 25 C
0.010
0.005
-50
-25
0
25
50
75
100
125
o
TJ, JUNCTION TEMPERATURE ( C)
150
175
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
1000
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
75
ID, DRAIN CURRENT (A)
40
60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
60
45
TA = 125oC
-55oC
30
25oC
15
0
100
10
o
TA = 125 C
1
25oC
0.1
-55oC
0.01
0.001
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6035AL/FDB6035AL Rev D(W)
