FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
• 80 A, 30 V
RDS(ON) = 6.5 mΩ @ VGS = 10 V
RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 175°C maximum junction temperature rating
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
A
(Note 1)
80
– Pulsed
PD
– Continuous
(Note 1)
240
68
W
0.45
W/°C
–65 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
2.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6670AL
FDB6670AL
13’’
24mm
800 units
FDP6670AL
FDP6670AL
Tube
n/a
45
©2003 Fairchild Semiconductor Corporation
FDP6670AL/FDB6670AL Rev D(W)
FDP6670AL/FDB6670AL
May 2003
FDP6670AL/FDB6670AL
Typical Characteristics
1.8
100
ID, DRAIN CURRENT (A)
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
VGS = 10V
4.5V
75
3.5V
50
25
3.0V
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
0
0
0.5
1
1.5
0.8
2
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
60
ID, DRAIN CURRENT (A)
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.021
1.6
ID = 80A
VGS =10V
ID = 40A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
1.4
1.2
1
0.8
0.017
0.013
TA = 125oC
0.009
TA = 25oC
0.6
-50
-25
0
25
50
75
100
125
0.005
150
2
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
1000
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 10V
ID, DRAIN CURRENT (A)
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
80
60
40
TA = 125oC
25oC
20
-55oC
0
100
TA = 125oC
10
25oC
1
-55oC
0.1
0.01
0.001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6670AL/FDB6670AL Rev D(W)
