FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) .
• 42 A, 30 V.
Applications
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 6.0 mΩ @ VGS = 10 V
RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• Synchronous rectifier
• DC/DC converter
• 175°C maximum junction temperature rating
.
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
FDB Series
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
Drain Current
Units
30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
S
V
V
(Note 1)
84
A
– Pulsed
PD
± 16
– Continuous
(Note 1)
240
93
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
W
0.48
W°C
-65 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Package Marking and Ordering Information
Device Marking
FDP6676
FDB6676
2000 Fairchild Semiconductor Corporation
Device
FDP6676
FDB6676
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
FDP6676/FDB6676 Rev C(W)
FDP6676/FDB6676
April 2001
FDP6676/FDB6676
Typical Characteristics
1.8
150
3.5V
4.5V
120
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
3.0V
90
60
30
2.5V
1.6
VGS = 3.0V
1.4
3.5V
4.0V
1.2
4.5V
6.0V
0.8
0
0
1
2
3
0
4
30
60
Figure 1. On-Region Characteristics.
120
150
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.017
1.9
ID = 21 A
ID =42 A
VGS = 10V
1.7
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
90
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
1.3
1.1
0.9
0.7
0.014
0.011
TA = 125oC
0.008
0.005
TA = 25oC
0.002
0.5
-50
-25
0
25
50
75
100
125
150
2
175
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
90
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
75
ID, DRAIN CURRENT (A)
10V
1
60
45
TA = 125oC
30
25oC
15
-55oC
1.5
2
2.5
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
VGS = 0V
10
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676/FDB6676 Rev. C(W)
