FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
• 38 A, 30 V.
RDS(ON) = 6.5 mΩ @ VGS = 10 V
RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
•
D
D
G
G
D
G
S
TO-220
TO-263AB
FDP Series
S
Absolute Maximum Ratings
Symbol
FDB Series
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
±16
V
A
(Note 1)
(Note 1)
– Pulsed
76
150
PD
Total Power Dissipation @ TC = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
70
Derate above 25°C
TL
W
0.56
W/°C
–55 to +150
°C
275
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.8
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
55
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB6676S
FDB6676S
13’’
24mm
800
FDP6676S
FDP6676S
Tube
n/a
45
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)
FDP6676S/FDB6676S
October 2001
FDP6676S/FDB6676S
Typical Characteristics
150
1.8
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
ID, DRAIN CURRENT (A)
125
4.5V
3.0V
100
2.5V
75
50
25
VGS = 2.5V
1.6
1.4
3.0V
3.5V
1.2
4.5V
10V
1
0.8
0
0
1
2
3
0
4
25
50
Figure 1. On-Region Characteristics.
100
125
150
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.6
ID = 38A
VGS =10V
ID = 19A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
75
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.014
0.012
0.01
TA = 125oC
0.008
0.006
TA = 25oC
0.6
0.004
-55
-35
-15
5
25
45
65
85
105
120
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
90
100
VGS = 0V
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
75
ID, DRAIN CURRENT (A)
10
VGS, GATE TO SOURCE VOLTAGE (V)
60
45
TA = 125oC
30
25oC
15
-55oC
10
TA = 125oC
1
25oC
0.1
-55oC
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0.01
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676S/FDB6676S Rev C (W)
