FDC640P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
• –4.5 A, –20 V
RDS(ON) = 0.053 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V
• Rugged gate rating (±12V)
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• Battery protection
D
S
1
SuperSOT TM
-6
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
–4.5
A
– Continuous
(Note 1a)
– Pulsed
PD
–20
Maximum Power Dissipation
TJ, TSTG
(Note 1a)
1.6
(Note 1b)
0.8
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.640
FDC640P
7’’
8mm
3000 units
2001 Fairchild Semiconductor International
FDC640P Rev E(W)
FDC640P
January 2001
FDC640P
Typical Characteristics
3
15
-3.0V
-ID, DRAIN CURRENT (A)
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-2.5V
12
9
6
-2.0V
3
VGS = -2.0V
2.5
2
-2.5V
1.5
-3.0V
-3.5V
0
0.5
1
1.5
2
0
2.5
3
6
9
12
15
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.16
1.5
ID = -2.25 A
ID = -4.5 A
VGS = -4.5 V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.5V
0.5
0
1.3
1.2
1.1
1
0.9
0.8
0.7
0.14
0.12
0.1
TA = 125oC
0.08
0.06
TA = 25oC
0.04
0.02
-50
-25
0
25
50
75
100
125
150
1.5
2
o
2.5
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)
12
25oC
10
-ID, DRAIN CURRENT (A)
-4.0V
1
125oC
8
6
4
2
VGS = 0V
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC640P Rev E(W)
