FDC642P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
-20 V, -4.0 A, 65 mΩ
Features
General Description
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
This P-Channel 2.5V specified MOSFET is produced using
Fairchild’s advanced PowerTrench® process that has been
especially tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching performance.
Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where the
larger packages are impractical.
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick)
Applications
Termination is Lead-free and RoHS Compliant
Load switch
Battery protection
Power management
D
D
D
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Ratings
-20
Gate to Source Voltage
±8
-Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
Units
V
V
-4.0
-20
Power Dissipation
TJ, TSTG
( Note 1a)
1.6
Power Dissipation
PD
(Note 1b)
0.8
Operating and Storage Junction Temperature Range
A
W
-55 to + 150
°C
78
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
.642
Device
FDC642P
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
Package
SSOT-6TM
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
January 2010
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3.5 V
16
VGS = -2.0 V
VGS = -3.0 V
VGS = -2.5 V
12
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
8
VGS = -1.5 V
4
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
4
VGS = -1.5 V
3
VGS = -2.0 V
2
1
VGS = -3.0 V VGS = -3.5 V
0
0
1
2
3
4
VGS = -2.5 V
0
5
0
4
Figure 1. On Region Characteristics
180
rDS(on), DRAIN TO
ID = -4.0 A
VGS = -4.5 V
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
12
16
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
150
ID = -4.0 A
120
90
TJ = 125 oC
60
TJ = 25 oC
30
1.0
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
20
-IS, REVERSE DRAIN CURRENT (A)
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
8
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
VGS = -4.5 V
16
VDS = -5 V
12
8
TJ = 150 oC
4
TJ = 25 oC
TJ = -55 oC
0
0.5
1.0
1.5
2.0
2.5
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDC642P Rev.C2
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDC642P Single P-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
