FDC645N
N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 26 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
Applications
• Low gate charge (13 nC typical)
• DC/DC converter
• High power and current handling capability
D
S
1
SuperSOT TM
-6
D
D
3
Drain Current
(Note 1a)
– Pulsed
PD
V
±12
– Continuous
Units
30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
4
TA=25oC unless otherwise noted
Parameter
VDSS
5
G
Absolute Maximum Ratings
Symbol
6
2
D
V
5.5
A
20
Maximum Power Dissipation
TJ, TSTG
(Note 1a)
1.6
(Note 1b)
0.8
W
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.645
FDC645N
7’’
8mm
3000 units
2000 Fairchild Semiconductor Corporation
FDC645N Rev C(W)
FDC645N
April 2001
FDC645N
Typical Characteristics
1.4
20
ID, DRAIN CURRENT (A)
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.5V
15
3.0V
2.5V
10
5
2.0V
0.5
3.5V
4.0V
4.5V
1
5.0V
10V
1
1.5
0
2
5
10
15
20
25
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
1.6
ID = 5.5A
VGS = 4.5V
ID = 3.75 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
0.8
0
0
VGS = 3.0V
1.2
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.06
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
150
2
2.5
3
3.5
4
4.5
5
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
o
25 C
25
ID, DRAIN CURRENT (A)
IS, REVERSE DRAIN CURRENT (A)
30
125oC
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC645N Rev C(W)
