November 1997
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount
package.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
S
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
SOIC-16
SOT-223
SO-8
1
5
3
3
.65
6
2
D
D
5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V.
4
G
SuperSOT
TM
pin 1
-6
Absolute Maximum Ratings
D
D
T A = 25°C unless otherwise note
Symbol Parameter
FDC653N
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
(Note 1a)
5
A
PD
Maximum Power Dissipation
(Note 1a)
1.6
- Pulsed
15
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
W
0.8
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
© 1997 Fairchild Semiconductor Corporation
FDC653N Rev.C
Typical Electrical Characteristics
VGS = 10V
3.5
6.0
R DS(ON) , NORMALIZED
5.0
4.5
12
4.0
9
3.5
6
3
0
3.0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
15
2.5
4.0
2
0.5
1
1.5
4.5
5.0
1.5
6.0
10
1
0.5
0
VGS =3.5V
3
2
0
3
6
9
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
1.8
0.18
1.6
R DS(ON) , ON-RESISTANCE (OHM)
I D = 5.0A
V GS = 10V
1.4
1.2
1
0.8
0.6
-50
I D =2A
0.15
0.12
0.09
TA = 125°C
0.06
TA = 25°C
0.03
0
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
150
2
4
6
8
VGS , GATE TO SOURCE VOLTAGE (V)
10
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
15
V DS = 5V
I S , REVERSE DRAIN CURRENT (A)
15
I D , DRAIN CURRENT (A)
RDS(ON) , NORMALIZED
15
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
12
12
9
TA = -55°C
6
25°C
125°C
3
0
1.5
VGS =0V
1
2.5
3
3.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
4.5
25°C
0.1
0.01
-55°C
0.001
0.0001
2
TA= 125°C
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC653N Rev.B
