FDC654P
Single P-Channel Logic Level PowerTrench® MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
• –3.6 A, –30 V.
RDS(ON) = 75 mΩ @ VGS = –10 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
• Low gate charge (6.2 nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• Battery protection
D
S
1
SuperSOT TM-6
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–3.6
A
PD
Maximum Power Dissipation
– Continuous
(Note 1a)
– Pulsed
–10
1.6
(Note 1b)
TJ, TSTG
(Note 1a)
0.8
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJC
(Note 1a)
78
°C/W
(Note 1)
RθJA
30
°C/W
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.654
FDC654P
7’’
8mm
3000 units
©2003 Fairchild Semiconductor Corporation
FDC654P Rev E1 (W)
FDC654P
May 2003
FDC654P
Typical Characteristics
15
2
-6.0V
-5.0V
V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
-4.5V
12
9
-4.0V
6
-3.5V
3
-3.0V
0
1.8
VGS = -3.5V
1.6
1.4
-4.0V
1.2
-4.5V
1
-5.0V
-6.0V
0.8
-7.0V
0.4
0
1
2
3
4
5
0
3
6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
15
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.3
ID = -3.6A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
9
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = -1.8A
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
150
2
4
o
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
-IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = -5.0V
-ID, DRAIN CURRENT (A)
-10V
0.6
8
125oC
6
4
2
0
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC654P Rev E1(W)
