June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
6.3 A, 30 V. RDS(ON) = 0.027 Ω @ VGS = 10 V
R DS(ON) = 0.035 Ω @ VGS = 4.5 V.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Low gate charge ( typical 9 nC).
SuperSOTTM-6
SOT-23
SuperSOTTM-8
S
.55
SuperSOT
pin 1
-6
SOIC-16
SOT-223
SO-8
5
3
D
6
2
A
G
TM
SuperSOTTM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
1
D
D
Fast switching.
4
D
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter
FDC655AN
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
(Note 1a)
6.3
A
PD
Maximum Power Dissipation
(Note 1a)
1.6
- Pulsed
20
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
W
0.8
-55 to 150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
© 1998 Fairchild Semiconductor Corporation
FDC655AN Rev.C
Typical Electrical Characteristics
VGS = 10V
2
4.5V
3.5V
6.0V
R DS(ON) , NORMALIZED
20
15
3.0V
10
5
2.5V
0
0
1
2
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
25
4.0V
4.5V
5.0V
7.0V
10V
1
0.5
3
VGS = 3.5V
1.5
0
5
10
VDS , DRAIN-SOURCE VOLTAGE (V)
15
20
25
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.1
I D = 6.3 A
VGS = 10 V
R DS(ON) , ON-RESISTANCE (OHM)
I D = 3.2A
1.4
1.2
1
0.8
0.6
-50
0.08
0.06
0.04
TA = 125°C
0.02
TA = 25°C
0
-25
0
25
50
75
100
125
2
150
4
Figure 3. On-Resistance Variation
20
I S , REVERSE DRAIN CURRENT (A)
25
VDS = 5V
25°C
125°C
20
15
10
5
0
2
V
GS
3
4
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
5
V GS = 0V
5
1
TA = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
1
8
Figure 4. On-Resistance Variation with
Gate-To-Source Voltage.
with Temperature.
TA = -55°C
6
V GS , GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
I D , DRAIN CURRENT (A)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source
Current
FDC655AN Rev.B
