FDD2512
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. These MOSFETs feature
faster switching and lower gate charge than other
MOSFETs with comparable RDS(ON) specifications. The
result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• 6.7 A, 150 V
RDS(ON) = 420 mΩ @ VGS = 10 V
RDS(ON) = 470 mΩ @ VGS = 6 V
• Low gate charge (8nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Drain Current
PD
Power Dissipation
Units
150
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
V
±20
V
(Note 3)
6.7
A
(Note 1a)
20
– Continuous
– Pulsed
42
(Note 1a)
W
3.8
(Note 1b)
TJ, TSTG
(Note 1)
1.6
Operating and Storage Junction Temperature Range
−55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2512
FDD2512
13’’
16mm
2500 units
2001 Fairchild Semiconductor Corporation
FDD2512 Rev B2(W)
FDD2512
August 2001
FDD2512
Typical Characteristics
1.4
8
VGS =10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
ID, DRAIN CURRENT (A)
6.0V
6
4.0V
4
2
1.3
VGS = 4.0V
1.2
2
4
6
8
5.0V
6.0V
0.9
10
0
1
2
VDS, DRAIN-SOURCE VOLTAGE (V)
3
4
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
0.8
ID = 1A
ID = 2.2A
VGS = 10V
2.2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
0
0
4.5V
1.1
1.8
1.4
1
0.6
0.7
0.6
TA = 125oC
0.5
0.4
0.3
TA = 25oC
0.2
-50
-25
0
25
50
75
100
125
150
0.2
175
3
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
7
8
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = 25V
125oC
ID, DRAIN CURRENT (A)
6
VGS, GATE TO SOURCE VOLTAGE (V)
6
4
2
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD2512 Rev B2(W)
