FDM3300NZ
® MOSFET
tm
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
20V, 10A, 23mΩ
Features
General Description
Max rDS(on) = 23mΩ at VGS = 4.5V, ID = 10A
This dual N-Channel MOSFET has been designed using
Max rDS(on) = 28mΩ at VGS = 2.5V, ID = 9A
Fairchild Semiconductor's advanced PowerTrench® process to
>2000V ESD protection
optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame
with all the drains on one side of the package.
Low Profile - 1mm maximum - in the new package MLP
3.3x3.3 mm
RoHS Compliant
Application
Li-lon Battery Pack
5
6
3
7
2
5
3
S2
D1
7
2
D2
4 G2
4
D2
D2
D2
G1
D1
8
1
S1
D2 6
S1
G1
S2
G2
8
D1
1
D1
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
Rating
20
±12
-Continuous
(Note 1a)
-Pulsed
Units
V
V
10
40
Power Dissipation (Steady State)
TJ, TSTG
(Note 1a)
2.1
(Note 1b)
PD
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
135
°C/W
Package Marking and Ordering Information
Device Marking
3300N
Device
FDM3300NZ
©2006 Fairchild Semiconductor Corporation
FDM3300NZ Rev.F
Package
Power 33
1
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
January 2007
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
VGS = 4.5V
ID, DRAIN CURRENT (A)
35
VGS = 2.5V
30
VGS = 3.0V
VGS = 3.5V
25
20
15
VGS = 2.0V
10
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
5
0
0.0
0.5
1.0
1.5
2.0
2.0
1.8
VGS = 2.0V
1.4
VGS =3.0V
1.2
1.0
VGS = 4.5V
0.8
0
1.6
15
20
60
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
1.4
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
5
10
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
ID = 10A
VGS = 4.5V
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
ID = 5.0A
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
50
40
TJ = 125oC
30
20
TJ = 25oC
10
150
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
40
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.5V
VGS = 3.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
1.6
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
30
VDD = 5V
20
TJ = 125oC
TJ = 25oC
10
TJ = -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
FDM3300NZ Rev.F
VGS = 0V
10
1
TJ = 125oC
TJ = 25oC
0.1
0.01
TJ = -55oC
1E-3
1E-4
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted